IRF9Z24S datasheet(1/10 Pages) IRF

Part #	IRF9Z24S

Description	Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

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Manufacturer	IRF [International Rectifier]

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IRF9Z24S/L

HEXFET® Power MOSFET

PD - 9.912A

VDSS = -60V

RDS(on) = 0.28Ω

ID = -11A

2

D

P a k

T O - 262

8/25/97

S

D

G

l Advanced Process Technology

l Surface Mount (IRF9Z24S)

l Low-profile through-hole (IRF9Z24L)

l 175°C Operating Temperature

l Fast Switching

l P- Channel

l Fully Avalanche Rated

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

on-resistance per silicon area.

This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D2Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF9Z24L) is available for low-

profile applications.

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

-11

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

-7.7

A

IDM

Pulsed Drain Current

-44

PD @TA = 25°C

Power Dissipation

3.7

W

PD @TC = 25°C

Power Dissipation

60

W

Linear Derating Factor

0.40

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

240

mJ

IAR

Avalanche Current

-11

A

EAR

Repetitive Avalanche Energy

6.0

mJ

dv/dt

Peak Diode Recovery dv/dt

-4.5

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

2.5

RθJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

Thermal Resistance

°C/W

Absolute Maximum Ratings

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