KSM27P06 datasheet(3/6 Pages) KERSEMI

Part #	KSM27P06

Description	60V P-Channel MOSFET

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Manufacturer	KERSEMI [Kersemi Electronic Co., Ltd.]

Direct Link	http://www.kersemi.com

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3 / 6 page

0

5

10

15

20

25

30

35

0

2

4

6

8

10

12

V

DS = -30V

V

DS = -48V

※ Note : I

D = -27 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※ Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

VDS, Drain-Source Voltage [V]

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

10

-1

10

0

10

1

10

2

175℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

-V

SD , Source-Drain Voltage [V]

0

10

20

30

40

50

60

70

80

90

100 110 120 130

0.00

0.04

0.08

0.12

0.16

0.20

0.24

※ Note : T

J = 25

℃

V

GS = - 20V

V

GS = - 10V

-I

D , Drain Current [A]

2

468

10

-1

10

0

10

1

10

2

175℃

25℃

-55℃

※ Notes :

1. V

DS = -30V

2. 250μ s Pulse Test

-V

GS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

- 15.0 V

- 10.0 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

Bottom : - 4.5 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

-V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

KSM27P06

2014-5-30

3

www.kersemi.com

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KSM27P06 Datasheet(PDF) 3 Page - Kersemi Electronic Co., Ltd.

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