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IRFSL33N15D Datasheet(PDF) 2 Page - International Rectifier |
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IRFSL33N15D Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFB/IRFS/IRFSL33N15D 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 14 ––– ––– S VDS = 50V, ID = 20A Qg Total Gate Charge ––– 60 90 ID = 20A Qgs Gate-to-Source Charge ––– 17 26 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– 27 41 VGS = 10V, td(on) Turn-On Delay Time ––– 13 ––– VDD = 75V tr Rise Time ––– 38 ––– ID = 20A td(off) Turn-Off Delay Time ––– 23 ––– RG = 3.6Ω tf Fall Time ––– 21 ––– VGS = 10VΩ Ciss Input Capacitance ––– 2020 ––– VGS = 0V Coss Output Capacitance ––– 400 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 91 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 2440 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 180 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 320 ––– VGS = 0V, VDS = 0V to 120V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 330 mJ IAR Avalanche Current ––– 20 A EAR Repetitive Avalanche Energy ––– 17 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 150 ––– ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 920 ––– nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 33 130 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.056 Ω VGS = 10V, ID = 20A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.90 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient ––– 40 |
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