2004, 2007

DESCRIPTION

The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such

as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride

surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.

FEATURES

• Over 25 dB gain available by connecting two FET’s in series

• High drain efficiency

:

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• Low intermodulation distortion

• Excellent Thermal Stability

• Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP

• Integrated ESD protection

• Excellent stability against HCI (Hot Carrier Injection)

APPLICATION

• Digital cellular base station PA : W-CDMA/GSM/D-AMPS/N-CDMA/PCS etc.

• UHF-band TV transmitter PA

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DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

LDMOS FIELD EFFECT TRANSISTOR

NE55410GR

N-CHANNEL SILICON POWER LDMOS FET

FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

Document No. PU10542EJ03V0DS (3rd edition)

Date Published January 2007 NS CP(N)

Printed in Japan