IRFBA1404P

PD - 93806

Specifically designed for Automotive applications, this Stripe Planar

techniques to achieve extremely low on-resistance per silicon area.

temperature, fast switching speed and improved ruggedness in

has been designed to have the same mechanical outline and pinout

as the industry standard TO-220 but can house a considerably

larger silicon die. The result is significantly increased current

handling capability over both the TO-220 and the much larger TO-

247 package. The combination of extremely low on-resistance

component count in multiparalled TO-220 applications, reduce

system power dissipation, upgrade existing designs or have TO-247

performance in a TO-220 outline. This package has been designed

to meet automotive, Q101, qualification standard.

These benefits make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other

applications.

Description

S

D

G

10/24/00

www.irf.com

1

Absolute Maximum Ratings

Parameter

Max.

Units

206

†

145

†

A

Pulsed Drain Current



650

Power Dissipation

300

W

Linear Derating Factor

2.0

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

See Fig.12a, 12b, 15, 16

mJ

Avalanche Current



A

Repetitive Avalanche Energy



30

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-40 to + 175

Storage Temperature Range

-55 to + 175

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Recommended clip force

20

N

°C

l

Anti-lock Braking Systems (ABS)

l

Electric Power Steering (EPS)

l

Electric Braking

l

Radiator Fan Control

†

Super-220™

Typical Applications

Benefits

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

Increase Current Handling Capability

l

175°C Operating Temperature

l

Fast Switching

l

Dynamic dv/dt Rating

l

Repetitive Avalanche Allowed up to Tjmax

AUTOMOTIVE MOSFET