H5N2522LS_15 datasheet(3/7 Pages) RENESAS

Part #	H5N2522LS

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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3 / 7 page

H5N2522LS

Preliminary

R07DS0057EJ0200 Rev.2.00

Page 3 of 6

Jul 23, 2010

Main Characteristics

50

40

30

20

10

0

4

0

8

12

16

20

50

40

30

20

10

0

2

0

46

8

10

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

10

1

100

0.1

1

0.01

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Drain Current (Typical)

VGS = 10 V

Ta = 25

°C

Pulse Test

100

10

1

0.1

1

10

1000

0.01

0.1

1000

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

100

VGS = 4 V

Ta = 25

°C

Pulse Test

10 V

15 V

20 V

8 V

4.5 V

5.5 V

5 V

6 V

Ta = 25

°C

1 shot

10

μs

Operation in this

area is limited by

RDS(on)

PW

=

100

μs

Tc = 75

°C

25

°C

−25°C

VDS = 10 V

Pulse Test

0.5

0.4

0.3

0.2

0.1

−25

02550

75

100 125

150

0

Case Temperature

Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature (Typical)

VGS = 10 V

Pulse Test

1

10

100

1000

100

10

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time (Typical)

di / dt = 100 A /

μs

VGS = 0, Ta = 25°C

1 A

ID = 3 A

1.5 A

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