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NP90N03VHG Datasheet(PDF) 1 Page - Renesas Technology Corp |
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NP90N03VHG Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 8 page  R07DS0128EJ0100 Rev.1.00 Page 1 of 6 Sep 24, 2010 Preliminary Data Sheet NP90N03VHG MOS FIELD EFFECT TRANSISTOR Description The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. LEAD PLATING PACKING Package NP90N03VHG-E1-AY∗ 1 TO-252, Taping (E1 type) NP90N03VHG-E2-AY∗ 1 Pure Sn (Tin) Tape 2500 p/reel TO-252, Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25 °C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25 °C) ID(DC) ±90 A Drain Current (pulse) ∗ 1 ID(pulse) ±360 A Total Power Dissipation (TC = 25 °C) PT1 105 W Total Power Dissipation (TA = 25 °C) PT2 1.2 W Channel Temperature Tch 175 °C Storage Temperature Tstg −55 to +175 °C Repetitive Avalanche Current ∗ 2 IAR 41 A Repetitive Avalanche Energy ∗ 2 EAR 168 mJ Notes: ∗1. TC = 25 °C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Tch(peak) ≤ 150°C, RG = 25 Ω Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) 1.43 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W R07DS0128EJ0100 Rev.1.00 Sep 24, 2010 |
Similar Part No. - NP90N03VHG_15 |
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Similar Description - NP90N03VHG_15 |
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