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RJK0323JPD Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK0323JPD Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page  RJK0323JPD Preliminary R07DS0334EJ0100 Rev.1.00 Page 4 of 6 Apr 18, 2011 50 40 30 20 10 0 20 16 12 8 4 10 20 30 40 50 0 Gate Charge Qg (nC) Dynamic Input Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Channel Temperature Tch ( °C) Avalanche Energy vs. Channel Temperature Derating Tc = 25 °C ID = 30 A VDS VDD = 25 V 10 V 5 V 50 40 30 20 10 0 0.4 0.8 1.21.6 2.0 Tc = 25 °C Pulse Test VGS = 0, −5 V 10 V 100 80 60 40 20 2550 75 100 125 150 0 Case Temperature Tc ( °C) Static Drain to Source On State Resistance vs. Temperature 20 −500 50 100 150 0 5 15 10 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 0 5 10 15 20 25 30 10000 1000 10 100 VGS VDD = 25 V 10 V 5 V IAP = 30 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω Tc = 25 °C VGS = 0 f = 1 MHz Ciss Coss Crss VGS = 10 V 4.5 V Pulse Test ID = 15 A |
Similar Part No. - RJK0323JPD_15 |
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Similar Description - RJK0323JPD_15 |
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