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IRFP450LC Datasheet(PDF) 1 Page - International Rectifier

Part # IRFP450LC
Description  Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFP450LC Datasheet(HTML) 1 Page - International Rectifier

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IRFP450LC
HEXFET® Power MOSFET
PD - 9.1231
Revision 0
VDSS = 500V
RDS(on) = 0.40
ID = 14A
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, V GS @ 10V
14
ID @ TC = 100°C
Continuous Drain Current, V GS @ 10V
8.6
A
IDM
Pulsed Drain Current
56
PD @TC = 25°C
Power Dissipation
190
W
Linear Derating Factor
1.5
W/°C
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
760
mJ
IAR
Avalanche Current
14
A
EAR
Repetitive Avalanche Energy
19
mJ
dv/dt
Peak Diode Recovery dv/dt
3.5
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
Thermal Resistance
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced Ciss, Coss, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs.
Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
Absolute Maximum Ratings
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
––––
––––
0.65
RθCS
Case-to-Sink, Flat, Greased Surface
––––
0.24
––––
°C/W
RθJA
Junction-to-Ambient
––––
––––
40
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