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2SK1151(L) Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK1151(L) Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page _15/1218/4/2SK1151(L)_15.png) 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Preliminary R07DS0397EJ0300 Rev.3.00 Page 4 of 6 May 16, 2011 10 8 6 4 2 0 0 40 80 120 160 Case Temperature TC (°C) –40 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test ID = 2 A 0.5 A 1 A Forward Transfer Admittance vs. Drain Current 5 2 1.0 0.5 0.05 0.10.21.02 5 Drain Current ID (A) 0.1 0.2 0.5 VDS = 20 V Pulse Test 75 °C –25 °C TC = 25°C Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ μs, Ta = 25°C VGS = 0 Pulse Test Reverse Drain Current IDR (A) 1,000 500 100 50 20 10 200 0.05 0.10.20.5 1.02 5 Typical Capacitance vs. Drain to Source Voltage 1,000 100 10 1 010 20 30 40 50 Drain to Source Voltage VDS (V) Coss Ciss Crss VGS = 0 f = 1 MHz Dynamic Input Characteristics 500 400 300 200 100 0 2 46 8 10 Gate Charge Qg (nc) 20 16 12 8 4 0 400 V 100 V VDS ID = 1.5 A VGS 250 V VDD = 400 V 250 V 100 V Switching Characteristics 100 20 10 5 2 1 50 0.05 0.10.20.5 1.02 5 Drain Current ID (A) tf VGS = 10 V VDD = 30 V PW = 2 μs, duty < 1% td (on) tr td (off) • • |
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