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IRFU13N20D Datasheet(PDF) 1 Page - International Rectifier |
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IRFU13N20D Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 2/14/00 IRFR13N20D IRFU13N20D SMPS MOSFET HEXFET® Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 200V 0.235 Ω 13A Typical SMPS Topologies l Telecom 48V input Forward Converters Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 13 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.2 A IDM Pulsed Drain Current 52 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 2.2 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings PD- 93814A Notes through are on page 10 D-Pak IRFR13N20D I-Pak IRFU13N20D |
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