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FYCL-S15AR2G2-10 Datasheet(PDF) 3 Page - Ningbo Foryard Optoelectronics Co., Ltd. |
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FYCL-S15AR2G2-10 Datasheet(HTML) 3 Page - Ningbo Foryard Optoelectronics Co., Ltd. |
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3 / 4 page  Model No. Rev. Min 5 — — — -40 -40 ■ ■ ■ ■ Electrical-Optical Characteristics ● Color Code & Chip Characteristics:(Test Condition:IF=20mA) Typ H Red 90nm 2.00 S Hi Red 20nm 1.80 D Super Red 20nm 1.90 E Orange 35nm 1.90 A Amber 35nm 1.90 Y Yellow 35nm 1.90 G Green 10nm 1.90 3.40 2.80 2.80 PG Pure Green 36nm 2.80 UHR Ultra Hi Red 20nm 1.90 UR Ultra Red 20nm 1.90 UE Ultra Orange 20nm 1.90 UA Ultra Amber AlGaInP 20nm 1.90 2.50 UY Ultra Yellow AlGaInP 20nm 1.90 2.50 UG Ultra Green AlGaInP 30nm 1.90 2.50 30nm 2.80 30nm 2.80 Note: 1.Luminous Intensity is based on the Foryard standards. 2.Pay attention about static for InGaN Page ： 3/4 14~18 570nm 590nm 15~20 14~20 610nm 1 Luminous Intensity (Iv) Unit:mcd AlGaAs/SH 660nm 700nm GaP 2.50 ℃ +85 13~18 mA 150 2.50 Storage Temperature Topr Symbol 100 V — Pd Max GaP Http://www.foryard.com Segment-to-Segment Luminous Intensity ratio(Iv-M) 1.5:1 610nm 6~12(mw) 4~6(mw) 470nm 80~90~120 3.80 80~90~120 3.80 3.80 AlGaInP 625nm 2.50 2.50 2.50 AlGaInP 30~60~80 Ultra Blue 26~38 13~18 625nm GaAsP GaAsP 2.50 2.50 0.7~1(mw) 60~120 AlGaInP 640nm 30~60 430nm 6~12(mw) 60~100 3.80 460nm 520nm InGaN 60nm InGaN 40~100~150 50~140~190 4.40 UB 460nm 635nm 3.80 570nm 470nm 590nm B Blue InGaN Ultra brightness GaAsP 2.50 AlGaAs/DH 650nm 2.50 Tstr — +85 Operating Temperature Max Unit Test Condition Peak Wave Length(λP) Spectral Line halfwidth(∆ λ1/2) mA mW ℃ Standard brightness Forward Voltage(VF) Unit:V 30 Pulse Current ■ ■ ■ ■ Absolute maximum ratings (Ta=25 ℃) (Ta=25 ℃) FYCL-S15AR2G2-XX A Model No. ： ： ： ：FYCL-S15AR2G2-XX — Ipeak Duty=0.1mS,1KHz Emitting Color Dice Material 2.50 — Value Reverse Voltage VR IR=30 Parameter Forward Current IF — Power Dissipation |
Similar Part No. - FYCL-S15AR2G2-10 |
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