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SMG2345PE Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMG2345PE Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente SMG2345PE -3.2A , -40V , RDS(ON) 164 mΩ Ω Ω Ω P-Channel Enhancement MOSFET 26-Aug-2013 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H J F K E 1 2 3 1 2 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size SC-59 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V TA=25°C -3.2 Continuous Drain Current 1 TA=70°C ID -2.7 A Pulsed Drain Current 2 IDM -10 A Continuous Source Current (Diode Conduction) 1 IS 0.4 A TA=25°C 1.25 Power Dissipation 1 TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Data t ≦ 5 sec 100 Maximum Junction to Ambient 1 Steady-State RθJA 150 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 ESD Protection Diode 2KV |
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