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IRFRU9310 Datasheet(PDF) 1 Page - International Rectifier

Part # IRFRU9310
Description  Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFRU9310 Datasheet(HTML) 1 Page - International Rectifier

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IRFR/U9310
PRELIMINARY
HEXFET® Power MOSFET
7/30/97
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.5
RθJA
Junction-to-Ambient (PCB mount)**
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
D - P a k
TO - 2 52 A A
I- P a k
TO - 251A A
l P-Channel
l Surface Mount (IRFR9310)
l Straight Lead (IRFU9310)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-1.8
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
-1.1
A
IDM
Pulsed Drain Current

-7.2
PD @TC = 25°C
Power Dissipation
50
W
Linear Derating Factor
0.40
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
92
mJ
IAR
Avalanche Current

-1.8
A
EAR
Repetitive Avalanche Energy

5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
-24
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
low
on-resistance per silicon area.
This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD 9.1663
S
D
G
VDSS = -400V
RDS(on) = 7.0Ω
ID = -1.8A


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