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SPR40N06 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SPR40N06 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page Elektronische Bauelemente SPR40N06 40A , 60V , RDS(ON) 12 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET 13-Jun-2014 Rev.A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR40N06 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING PACKAGE INFORMATION Package MPQ Leader Size PR-8PP 3K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TC=25°C 40 Continuous Drain Current 1@V GS=10V TC=100°C ID 28 A Pulsed Drain Current 2 TC=25°C I DM 110 A Single Pulse Avalanche Energy 3 EAS 50 mJ Avalanche Current IAS 30 A Total Power Dissipation 4 TC=25°C P D 69 W Operating Junction & Storage Temperature TJ, TSTG -55~150 °C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1(Max). RθJA 36 °C / W Thermal Resistance Junction-Case 1(Max). RθJC 1.8 °C / W 40N06 = Date code PR-8PP Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.9 5.1 G 0.8 1.0 B 5.7 5.9 H 0.254 Ref. C 5.95 6.2 I 4.0 Ref. D 1.27 BSC. J 3.4 Ref. E 0.35 0.49 K 0.6 Ref. F 0.1 0.2 L 1.4 Ref. G S S S D D D D |
Similar Part No. - SPR40N06_15 |
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Similar Description - SPR40N06_15 |
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