RJL5012DPE_15 datasheet(1/7 Pages) RENESAS

Part #	RJL5012DPE

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0435EJ0200 Rev.2.00

Page 1 of 6

Jun 14, 2011

Preliminary Datasheet

RJL5012DPE

Silicon N Channel MOS FET

High Speed Power Switching

Features

 Built-in fast recovery diode

 Low on-resistance

RDS(on) = 0.56  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)

 Low leakage current

 High speed switching

Outline

1

2

3

4

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1) )

1. Gate

2. Drain

3. Source

4. Drain

D

G

S

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

500

V

Gate to source voltage

VGSS

30

V

Drain current

ID

12

A

Drain peak current

ID (pulse)

Note1

36

A

Body-drain diode reverse drain current

IDR

12

A

Body-drain diode reverse drain peak current

IDR (pulse)

Note1

36

A

Avalanche current

IAP

Note3

3

A

Avalanche energy

EAR

Note3

0.5

mJ

Channel dissipation

Pch

Note2

100

W

Channel to case thermal impedance

ch-c

1.25

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at Tc = 25

C

3. STch = 25

C, Tch  150C

R07DS0435EJ0200

(Previous: REJ03G1745-0100)

Rev.2.00

Jun 14, 2011

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