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RJL5012DPE Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJL5012DPE Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0435EJ0200 Rev.2.00 Page 1 of 6 Jun 14, 2011 Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline 1 2 3 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 1. Gate 2. Drain 3. Source 4. Drain D G S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 12 A Drain peak current ID (pulse) Note1 36 A Body-drain diode reverse drain current IDR 12 A Body-drain diode reverse drain peak current IDR (pulse) Note1 36 A Avalanche current IAP Note3 3 A Avalanche energy EAR Note3 0.5 mJ Channel dissipation Pch Note2 100 W Channel to case thermal impedance ch-c 1.25 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C R07DS0435EJ0200 (Previous: REJ03G1745-0100) Rev.2.00 Jun 14, 2011 |
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