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SPR80N03 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SPR80N03 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SPR80N03 80A , 30V , RDS(ON) 5.5 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET 16-May-2014 Rev.A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING PACKAGE INFORMATION Package MPQ Leader Size PR-8PP 3K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC=25°C 80 Continuous Drain Current 1@V GS=10V TC=100°C ID 50 A Pulsed Drain Current 2 TC=25°C I DM 160 A Single Pulse Avalanche Energy 3 EAS 252 mJ Avalanche Current IAS 48 A Power Dissipation 4 TC=25°C P D 53 W Operating Junction & Storage Temperature TJ, TSTG -55~150 °C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1(Max). RθJA 62 °C / W Thermal Resistance Junction-Case 1(Max). RθJC 2.36 °C / W 80N03 = Date code PR-8PP G S S S D D D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.9 5.1 G 0.8 1.0 B 5.7 5.9 H 0.254 Ref. C 5.95 6.2 I 4.0 Ref. D 1.27 BSC. J 3.4 Ref. E 0.35 0.49 K 0.6 Ref. F 0.1 0.2 L 1.4 Ref. |
Similar Part No. - SPR80N03_15 |
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Similar Description - SPR80N03_15 |
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