IRG4BC20FD datasheet(3/10 Pages) IRF

Part #	IRG4BC20FD

Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IRG4BC20FD

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Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

0.1

1

10

100

0

2

4

6

8

10

12

14

f, Frequency (KHz)

1

10

100

1

10

V

, Collector-to-Emitter Voltage (V)

CE

V

= 15V

20µs PULSE WIDTH

GE

T = 25 C

J

o

T = 150 C

J

o

1

10

100

5

6

7

8

9

10

11

12

13

14

V

, Gate-to-Emitter Voltage (V)

GE

V

= 50V

5µs PULSE WIDTH

CC

T = 25 C

J

o

T = 150 C

J

o

6 0% of rate d

volta ge

I

Ideal diodes

S qua re w a v e :

For both:

D uty cy cle: 50%

T = 12 5 °C

T

= 90 °C

G a te drive as specifie d

sin k

J

P ow e r Dis sip ation =

W

13

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