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NE3509M14 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # NE3509M14
Description  N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NE3509M14 Datasheet(HTML) 3 Page - Renesas Technology Corp

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NE3509M14
R09DS0011EJ0100 Rev.1.00
Page 3 of 10
Jan 21, 2011
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Ambient Temperature TA (
°C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
250
200
150
100
50
0
50
100
150
200
250
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
Gate to Source Voltage VGS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
50
45
40
35
30
25
20
15
10
5
0
–1.0
–0.8
–0.6
–0.4
–0.2
0
Drain to Source Voltage VDS (V)
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
100
20
40
60
80
0
12345
VGS = 0 V
–0.2 V
–0.3 V
–0.1 V
–0.4 V
–0.5 V
Frequency f (GHz)
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
2.0
1.2
1.4
1.6
1.8
0.6
0.8
1.0
0.2
0.4
0.0
20
6
8
10
12
14
18
4
2
16
0
0
5
10
15
NFmin
Ga
VDS = 2 V
ID = 10 mA
Drain Current ID (mA)
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
2.0
1.2
1.4
1.6
1.8
0.6
0.8
1.0
0.2
0.4
0.0
20
6
8
10
12
14
18
4
2
16
0
0
5
10
15
20
25
30
35
40
f = 2 GHz
VDS = 2 V
NFmin
Ga
Drain Voltage VDS (V)
ASSOCIATED GAIN vs. DRAIN VOLTAGE
MINIMUM NOISE FIGURE,
2.0
1.2
1.4
1.6
1.8
0.6
0.8
1.0
0.2
0.4
0.0
20
6
8
10
12
14
18
4
2
16
0
1.0
1.5
2.0
2.5
3.0
3.5
NFmin
Ga
f = 2 GHz, ID = 10 mA
Remark The graphs indicate nominal characteristics.


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