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NE3513M04-T2B Datasheet(PDF) 2 Page - Renesas Technology Corp |
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NE3513M04-T2B Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 10 page NE3513M04 R09DS0028EJ0100 Rev.1.00 Page 2 of 8 Oct 18, 2011 RECOMMENDED OPERATING RANGE (TA = +25 °C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS +1 +2 +3 V Drain Current ID 3 10 15 mA Input Power Pin – – 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25 °C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = –3.0 V – 0.5 10 μA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 30 60 mA Gate to Source Cut-off Voltage VGS (off) VDS = 2 V, ID = 100 μA –0.2 –0.5 –1.3 V Transconductance gm VDS = 2 V, ID = 10 mA 50 65 – mS Noise Figure NF – 0.45 0.65 dB Associated Gain Ga VDS = 2 V, ID = 10 mA, f = 12 GHz 11.5 13 – dB STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 °C, unless otherwise specified) Parameter Symbol Test Conditions Reference Value Unit Noise Figure NF 0.5 dB Associated Gain Ga VDS = 2 V, ID = 6 mA, f = 12 GHz 12 dB |
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