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IRG4PH30 Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PH30 Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE E G n-ch an nel C VCES = 1200V VCE(on) typ. = 3.10V @VGE = 15V, IC = 10A PD- 91579A TO-247AC Short Circuit Rated UltraFast IGBT Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 20 IC @ TC = 100°C Continuous Collector Current 10 ICM Pulsed Collector Current Q 40 A ILM Clamped Inductive Load Current R 40 IF @ TC = 100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current 40 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m) Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT ––– ––– 1.2 RθJC Junction-to-Case - Diode ––– ––– 2.5 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g (oz) Thermal Resistance Absolute Maximum Ratings W Features Features Features Features Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces IRGPH30MD2 products • For hints see design tip 97003 Benefits 2/7/2000 www.irf.com 1 |
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