IRG4RC10 datasheet(3/8 Pages) IRF

Part #	IRG4RC10

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IRG4RC10S

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3

0.0

1.0

2.0

3.0

0.1

1

10

100

f, Frequency (kHz)

)

60% of rated

voltage

Ideal diodes

Square wave:

For both:

Duty cycle: 50%

T = 125˚C

T

= 90˚C

Gate drive as specified

sink

J

Triangular wave:

Clamp voltage:

80% of rated

Power Dissipation = 0.70W

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

1

10

100

0.8

1.2

1.6

2.0

2.4

2.8

3.2

V

, Collector-to-Emitter Voltage (V)

CE

V

= 15V

20µs PULSE WIDTH

GE

T = 25 C

J

°

T = 150 C

J

°

1

10

100

6

8

10

12

V

, Gate-to-Emitter Voltage (V)

GE

V

= 50V

5µs PULSE WIDTH

CC

T = 25 C

J

°

T = 150 C

J

°

5µs PULSE WIDTH

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