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SSF7401 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SSF7401
Description  P-Ch Enhancement Mode MOSFET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSF7401 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSF7401
-30V , -2A
P-Ch Enhancement Mode MOSFET
18-Oct-2011 Rev. B
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
SOT-323
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSF7401 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltage as low as 2.5V. It can be
used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. The SSF7401 is universally used for all
commercial-industrial applications.
FEATURES
Small Package Outline
Lower Gate Charge
MARKING CODE
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-323
3K
7 inch
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
TA=25°C
-2
A
Continuous Drain Current 3
TA=70°C
ID
-1.5
A
Pulsed Drain Current 1.2
IDM
-10
A
Linear Derating Factor
0.0028
°C / W
Power Dissipation
PD
0.35
W
Thermal Resistance Junction-Ambient 3
RθJA
360
°C / W
Operating Junction and Storage Temperature
TJ, TSTG
-55~150
°C
Note:
1. Pulse width limited by Max. junction temperature.
2. Pulse width 300
μs, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec

G

S
D

Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.80
2.20
G
0.100 REF.
B
1.80
2.45
H
0.525 REF.
C
1.15
1.35
J
0.08
0.25
D
0.80
1.10
K
-
-
E
1.20
1.40
L
0.650 TYP.
F
0.20
0.40
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
7401


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