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SSG2601 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG2601 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 7 page Elektronische Bauelemente SSG2601 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.3 A, 20 V, RDS(ON) 25 mΩ Ω Ω Ω P-Ch: -5.3A, -20 V, RDS(ON) 75 mΩ Ω Ω Ω 10-Jun-2014 Rev. A Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.5 - 1 V VDS=VGS, ID=250uA Forward Transconductance gfs - 25 - S VDS=5V, ID=6A Gate-Source Leakage Current IGSS - - ±100 nA VGS = ±12V TJ=25°C - - 1 Drain-Source Leakage Current TJ=55°C IDSS - - 5 uA VDS=16V, VGS=0 - - 25 VGS=4.5V, ID=5.3A Static Drain-Source On-Resistance 2 RDS(ON) - - 34 m VGS=2.5V, ID=5A Total Gate Charge 2 Qg - 9.5 - Gate-Source Charge Qgs - 1.33 - Gate-Drain (“Miller”) Change Qgd - 2.5 - nC ID=6A VDS=15V VGS=4.5V Turn-on Delay Time 2 Td(on) - 4.6 - Rise Time Tr - 32 - Turn-off Delay Time Td(off) - 25.6 - Fall Time Tf - 8.4 - nS VDS=10V VGS=4.5V ID=6A RG=3.3 Input Capacitance Ciss - 635 - Output Capacitance Coss - 70 - Reverse Transfer Capacitance Crss - 63 - pF VGS=0 VDS=15V f=1.0MHz Source-Drain Diode Forward On Voltage 2 VSD - - 1.2 V IS=1.2A, VGS=0, Tj=25°C Continuous Source Current 1,4 IS - - 6.3 A Pulsed Source Curren 2,4 ISM - - 25 A VD= VG=0, Force Current Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 20Z copper. 135°C/ W when mounted on Min. copper pad. 2. The date tested by pulse width≦300us, duty cycle≦2%. 3. The power dissipation is limited by 150°C juncti on temperature. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. |
Similar Part No. - SSG2601_15 |
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Similar Description - SSG2601_15 |
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