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CLY2 Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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CLY2 Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 8 page CLY2 Datasheet For additional information and latest specifications, see our website: www.triquint.com 3 Revision C, December 14, 2005 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 9 V Drain-gate voltage VDG 12 V Gate-source voltage VGS -6 V Drain current ID 600 mA Channel temperature TCh 150 °C Storage temperature Tstg -55...+150 °C Total power dissipation (Ts < 50 °C) 1) Ptot 900 mW Thermal Resistance Channel-soldering point 1) RthChS ≤110 K/W 1)Ts: Temperature at soldering point Electrical Characteristics (TA = 25°C , unless otherwise specified) Parameter Symbol min typ max Unit Drain-source saturation current VDS = 3 V VGS = 0 V IDSS 300 450 650 mA Drain-source pinch-off current VDS = 3 V VGS = -3.8 V ID - 5 50 µA Gate pinch-off current VDS = 3 V VGS = -3.8 V IG - 5 20 µA Pinch-off Voltage VDS= 3 V ID=50µA VGS(p) -3.8 -2.8 -1.8 V Small Signal Gain*) VDS = 5 V ID = 180 mA f = 1.8 GHz Pin = -5 dBm G - 15.5 - dB Small Signal Gain*) VDS = 3 V ID = 180 mA f = 1.8 GHz Pin = -5 dBm G - 14.5 - dB Output Power VDS = 3 V ID = 180 mA f = 1.8 GHz Pin = 10 dBm Po 22.5 23.5 - dBm |
Similar Part No. - CLY2_15 |
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Similar Description - CLY2_15 |
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