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T1G2028536-FL Datasheet(PDF) 6 Page - TriQuint Semiconductor

Part # T1G2028536-FL
Description  285W, 36V DC ??2 GHz, GaN RF Power Transistor
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

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T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 10-17-13
- 6 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference plane.
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Pout [dBm]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
600 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S
= 1.91 + j0.06 Ω
Z
L = 1.39 + j0.54 Ω
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Pout [dBm]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
800 MHz, 300 usec 10%, Vds = 36 V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S
= 0.84 - j0.48 Ω
Z
L = 1.48 + j1.01 Ω
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Pout [dBm]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
1000 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S = 1.58 - j2.24 Ω
Z
L = 1.40 + j0.26 Ω
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Pout [dBm]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
1500 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S = 9.73 - j2.20 Ω
Z
L = 1.47 - j0.15 Ω
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Pout [dBm]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
2000 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S
= 1.42 + j1.35 Ω
Z
L
= 1.48 - j1.02 Ω


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