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T1G2028536-FL Datasheet(PDF) 6 Page - TriQuint Semiconductor |
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T1G2028536-FL Datasheet(HTML) 6 Page - TriQuint Semiconductor |
6 / 13 page T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor Datasheet: Rev A 10-17-13 - 6 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Typical Performance Performance is based on compromised impedance point and measured at DUT reference plane. 40 42 44 46 48 50 52 54 56 18 19 20 21 22 23 24 25 26 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 Pout [dBm] T1G2028536-FL Gain DrEff. and PAE vs. Pout 600 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA Gain DrEff. PAE Z S = 1.91 + j0.06 Ω Z L = 1.39 + j0.54 Ω 40 42 44 46 48 50 52 54 56 18 19 20 21 22 23 24 25 26 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 Pout [dBm] T1G2028536-FL Gain DrEff. and PAE vs. Pout 800 MHz, 300 usec 10%, Vds = 36 V, Idq = 576 mA Gain DrEff. PAE Z S = 0.84 - j0.48 Ω Z L = 1.48 + j1.01 Ω 40 42 44 46 48 50 52 54 56 14 15 16 17 18 19 20 21 22 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 Pout [dBm] T1G2028536-FL Gain DrEff. and PAE vs. Pout 1000 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA Gain DrEff. PAE Z S = 1.58 - j2.24 Ω Z L = 1.40 + j0.26 Ω 40 42 44 46 48 50 52 54 56 14 15 16 17 18 19 20 21 22 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 Pout [dBm] T1G2028536-FL Gain DrEff. and PAE vs. Pout 1500 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA Gain DrEff. PAE Z S = 9.73 - j2.20 Ω Z L = 1.47 - j0.15 Ω 40 42 44 46 48 50 52 54 56 14 15 16 17 18 19 20 21 22 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 40 42 44 46 48 50 52 54 56 0 10 20 30 40 50 60 70 80 Pout [dBm] T1G2028536-FL Gain DrEff. and PAE vs. Pout 2000 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA Gain DrEff. PAE Z S = 1.42 + j1.35 Ω Z L = 1.48 - j1.02 Ω |
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