T1G2028536-FL

285W, 36V DC – 2 GHz, GaN RF Power Transistor

Datasheet: Rev A 10-17-13

- 2 of 13 -

Disclaimer: Subject to change without notice

© 2013 TriQuint

www.triquint.com

Absolute Maximum Ratings

Parameter

Value

145 V (Min.)

48 V

-7 to 0 V

24 A

-57 to 67 mA

260 W

RF Input Power, CW,

47 dBm

275 °C

Mounting Temperature

(30 Seconds)

320 °C

Storage Temperature

-40 to 150 °C

Operation of this device outside the parameter ranges

given above may cause permanent damage. These are

stress ratings only, and functional operation of the device

at these conditions is not implied.

Recommended Operating Conditions

Parameter

Value

36 V (Typ.)

576 mA (Typ.)

13.3 A (Typ.)

-3.0 V (Typ.)

250 °C (Max)

226 W

288 W

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended

operating conditions.

RF Characterization – Load Pull Performance at 2.0 GHz

(1)

Symbol Parameter

Min

Typical

Max

Units

Linear Gain

19.4

dB

Output Power at 3 dB Gain Compression

268.9

W

Drain Efficiency at 3 dB Gain Compression

56.3

%

Power-Added Efficiency at 3 dB Gain

Compression

55.1

%

Gain at 3 dB Compression

16.4

dB

Notes:

RF Characterization – Load Pull Performance at 1.0 GHz

(1)

Symbol Parameter

Min

Typical

Max

Units

Linear Gain

20.8

dB

Output Power at 3 dB Gain Compression

316.0

W

Drain Efficiency at 3 dB Gain Compression

66.7

%

Power-Added Efficiency at 3 dB Gain

Compression

65.6

%

Gain at 3 dB Compression

17.8

dB

Notes: