T1G3000532-SM

5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor

Datasheet: Rev 001- 06-13-14

- 11 of 21 -

Disclaimer: Subject to change without notice

© 2014 TriQuint

www.triquint.com

Load Pull Smith Charts

(1, 2)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the

impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances

listed follow an optimized trajectory to maintain high power and high efficiency.

Notes:

1.

32V, 25mA, Pulsed signal with 100uS pulse width and 20% duty cycle. 3dB compression reference at Pin_ref.

2.

See page 18 for load pull and source pull reference planes.

3.5GHz, Load-pull

37

36.7

36.4

11.7

11.2

10.7

52.6

49.6

46.6

Max Power is 37dBm

Ω

Ω

Ω

Γ

Γ

Γ

Max Gain is 11.8dB

Ω

Ω

Ω

Γ

Γ

Γ

Max PAE is 54.9%

Ω

Ω

Ω

Γ

Γ

Γ

Ω

Ω

Ω

Pin_ref = 3.6dBm

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Power

Gain

PAE