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T1G3000532-SM Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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T1G3000532-SM Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 21 page T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Datasheet: Rev 001- 06-13-14 - 2 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Absolute Maximum Ratings Parameter Value Breakdown Voltage (BVDG) 100 V Gate Voltage Range (VG) -50 to 0 V Drain Current (ID) 0.6 A Gate Current (IG) -1.25 to 2.1 mA Power Dissipation (PD) 7.5 W RF Input Power, CW, T = 25°C (PIN) 25 dBm Channel Temperature (TCH) 275 °C Mounting Temperature (30 Seconds) 320 °C Storage Temperature -40 to 150 °C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (VD) 32 V (Typ.) Drain Quiescent Current (IDQ) 25 mA (Typ.) Peak Drain Current ( ID) 326 mA (Typ.) Gate Voltage (VG) -2.7 V (Typ.) Channel Temperature (TCH) 225 °C (Max) Power Dissipation, CW (PD) 7.05 W (Max) Power Dissipation, Pulse (PD) 9.1 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. RF Characterization – Load Pull Performance at 1.5 GHz Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 17.5 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 5.5 W PAE3dB Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 70.5 % G3dB Gain at 3 dB Compression, Power Tuned 14.5 dB RF Characterization – Load Pull Performance at 1.0 GHz Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 16.5 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 5.9 W PAE3dB Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 77.3 % G3dB Gain at 3 dB Compression, Power Tuned 13.5 dB |
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