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T1G4003532-FL Datasheet(PDF) 1 Page - TriQuint Semiconductor

Part # T1G4003532-FL
Description  35W, 32V, DC ??3.5 GHz, GaN RF Power Transistor
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

T1G4003532-FL Datasheet(HTML) 1 Page - TriQuint Semiconductor

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T1G4003532-FL
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Data Sheet: Rev A 10/18/2012
- 1 of 13 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network
®
Applications
Military radar
Civilian radar
Professional and military radio
communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
Functional Block Diagram
Frequency: DC to 3.5 GHz
Output Power (P3dB): 37 W at 3.5 GHz
Linear Gain: >16 dB at 3.5 GHz
Operating Voltage: 32 V
Low thermal resistance package
General Description
Pin Configuration
The TriQuint T1G4003532-FL is a 37 W (P3dB)
discrete GaN on SiC HEMT which operates
from DC to 3.5 GHz. The device is constructed
with TriQuint’s proven 0.25 µm process, which
features advanced field plate techniques to
optimize power and efficiency at high drain
bias operating conditions. This optimization
can potentially lower system costs in terms of
fewer amplifier line-ups and lower thermal
management costs.
Lead-free and RoHS compliant
Evaluation Boards are available upon request
.
Pin #
Symbol
1
Vd/RF OUT
2
Vg/RF IN
Flange
Source
Ordering Information
Material No.
Part No.
Description
ECCN
1092933
T1G4003532-FL
Packaged part:
Flanged
EAR99
1095349
T1G4003532-
FS/FL-EVB1
2.7-3.5 GHz
Eval. Board
EAR99


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