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T1G4003532-FS Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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T1G4003532-FS Datasheet(HTML) 2 Page - TriQuint Semiconductor |
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2 / 13 page  T1G4003532-FS 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Data Sheet: Rev A 10/18/2012 - 2 of 13 - Disclaimer: Subject to change without notice © 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network ® Specifications Absolute Maximum Ratings Parameter Rating Drain to Gate Voltage, Vd – Vg 40 V Drain Voltage, Vd +40 V Gate Voltage, Vg -8 to 0 V Drain Current, Id 4.5 A Gate Current, Ig -7.5 to 7.5 mA Power Dissipation, Pdiss 40 W RF Input Power, CW, T = 25 oC 38.75 dBm Channel Temperature, Tch 275 oC Mounting Temperature (30 sec) 320 oC Storage Temperature -40 to 150 oC Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Refer to the Median Life Time plot on pg. 3 for additional information regarding channel temperature. Recommended Operating Conditions Parameter Min Typical Max Units Vd 32 V Idq 150 mA Id (Peak Current) 2400 mA Vg -3.9 V Channel Temperature, Tch 200 oC Power Dissipation, Pdiss (CW) 24.5 W Power Dissipation, Pdiss (Pulse) 35 W Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Recommended operating conditions apply unless otherwise specified: TA = 25 °C, Vd = 32 V, Idq = 150 mA, Vg = -3.9 V RF Characteristics Characteristics Symbol Min Typ Max Units Load Pull Performance at 1.0 GHz (VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%) Linear Gain GLIN 23.0 dB Output Power at 3 dB Gain Compression P3dB 40.1 W Drain Efficiency at 3 dB Gain Compression DE3dB 73.0 % Power-Added Efficiency at 3 dB Gain Compression PAE3dB 72.5 % Gain at 3 dB Compression G3dB 20.0 dB Load Pull Performance at 3.5 GHz (VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%) Linear Gain GLIN 18.8 dB Output Power at 3 dB Gain Compression P3dB 42.6 W Drain Efficiency at 3 dB Gain Compression DE3dB 62.1 % Power-Added Efficiency at 3 dB Gain Compression PAE3dB 60.5 % Gain at 3 dB Compression G3dB 15.8 dB Performance at 3.5 GHz in the 2.7 to 3.5 GHz Eval. Board (VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%) Linear Gain GLIN 16.0 17.0 dB Output Power at 3 dB Gain Compression P3dB 33.0 37.0 W Drain Efficiency at 3 dB Gain Compression DE3dB 53.0 57.0 % Power Added Efficiency at 3 dB Compression PAE3dB 48.0 54.0 % Gain at 3 dB Compression G3dB 13.0 14.0 dB Narrow Band Performance at 3.50 GHz (VDS = 32 V, IDQ = 150 mA, CW at P1dB) Impedance Mismatch Ruggedness VSWR 10:1 |
Similar Part No. - T1G4003532-FS_15 |
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