Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

T1G4005528-FS Datasheet(PDF) 2 Page - TriQuint Semiconductor

Part # T1G4005528-FS
Description  55W, 28V, DC ??3.5GHz, GaN RF Power Transistor
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

T1G4005528-FS Datasheet(HTML) 2 Page - TriQuint Semiconductor

  T1G4005528-FS_15 Datasheet HTML 1Page - TriQuint Semiconductor T1G4005528-FS_15 Datasheet HTML 2Page - TriQuint Semiconductor T1G4005528-FS_15 Datasheet HTML 3Page - TriQuint Semiconductor T1G4005528-FS_15 Datasheet HTML 4Page - TriQuint Semiconductor T1G4005528-FS_15 Datasheet HTML 5Page - TriQuint Semiconductor T1G4005528-FS_15 Datasheet HTML 6Page - TriQuint Semiconductor T1G4005528-FS_15 Datasheet HTML 7Page - TriQuint Semiconductor T1G4005528-FS_15 Datasheet HTML 8Page - TriQuint Semiconductor T1G4005528-FS_15 Datasheet HTML 9Page - TriQuint Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 2 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Notes:
1. Operation of this device outside the parameter ranges
given may cause permanent damage. These are stress
ratings only, and functional operation of the device at
these conditions is not implied. Refer to the Median Life
Time plot for additional information regarding channel
temperature.
Absolute Maximum Ratings
Parameter
Value
Drain to Gate Voltage, Vd - Vg
40 V
Gate Voltage, Vg
-8 to 0 V
Drain Current, Id
9.6 A
Gate Current, Ig
-20 to 33 mA
Power Dissipation, Pdiss
90 W
RF Input Power, CW, T = 25 °C
43 dBm
Channel Temperature, Tch
275 °C
Mounting Temperature, (30 sec)
320 °C
Storage Temperature
-40 to 150 °C
DC Characteristics
Recommended operating conditions apply unless otherwise specified: TA = 25 °C
Characteristics
Symbol
Min
Typ
Max Unit
Conditions
Break-Down Voltage Drain Source
BVDSX
85
120
V
VGS = -8 V, ID = 10 mA
Gate Quiescent Voltage
VGS (Q)
-3.5
V
VDS = 28 V, IDQ = 0.8 A
Gate Threshold Voltage
VGS (th)
-4.5
V
VDS = 10 V, ID = 40 mA
Saturated Drain Current
IDSX
16
A
VDS = 5 V, VGS = 0 V
RF Characteristics – Load Pull Performance at 3.0 GHz
VDS = 28 V; IDQ = 200 mA; Pulse: 100 s, 20 %
Characteristics
Symbol
Min
Typ
Max
Unit
Linear Gain
GLIN
17.3
dB
Output Power at 1 dB Gain Compression
P1dB
51.3
W
Drain Efficiency at 1 dB Gain Compression
DE1dB
59.0
%
Power-Added Efficiency at 1 dB Gain Compression
PAE1dB
57.6
%
Gain at 1 dB Compression
G1dB
16.3
dB
RF Characteristics – Load Pull Performance at 3.5 GHz
VDS = 28 V; IDQ = 200 mA; Pulse: 100 s, 20 %
Characteristics
Symbol
Min
Typ
Max
Unit
Linear Gain
GLIN
17.6
dB
Output Power at 1 dB Gain Compression
P1dB
55.0
W
Drain Efficiency at 1 dB Gain Compression
DE1dB
62.1
%
Power-Added Efficiency at 1 dB Gain Compression
PAE1dB
60.7
%
Gain at 1 dB Compression
G1dB
16.6
dB


Similar Part No. - T1G4005528-FS_15

ManufacturerPart #DatasheetDescription
logo
TriQuint Semiconductor
T1G4005528-FS-EVB1 TRIQUINT-T1G4005528-FS-EVB1 Datasheet
830Kb / 4P
   55W, 28V, DC ??3.5GHz, GaN RF Power Transistor
More results

Similar Description - T1G4005528-FS_15

ManufacturerPart #DatasheetDescription
logo
TriQuint Semiconductor
T1G4005528-FS TRIQUINT-T1G4005528-FS Datasheet
830Kb / 4P
   55W, 28V, DC ??3.5GHz, GaN RF Power Transistor
T2G4005528-FS TRIQUINT-T2G4005528-FS_15 Datasheet
1Mb / 13P
   55W, 28V DC 3.5 GHz, GaN RF Power Transistor
logo
Qorvo, Inc
T2G4005528-FS QORVO-T2G4005528-FS Datasheet
1Mb / 13P
   55W, 28V DC ??3.5 GHz, GaN RF Power Transistor
logo
TriQuint Semiconductor
T2G6003028-FS TRIQUINT-T2G6003028-FS_15 Datasheet
778Kb / 13P
   30W, 28V DC 6 GHz, GaN RF Power Transistor
TGF2929-FL TRIQUINT-TGF2929-FL_15 Datasheet
3Mb / 21P
   100W, 28V, DC ??3.5 GHz, GaN RF Power Transistor
T2G6001528-SG TRIQUINT-T2G6001528-SG Datasheet
6Mb / 18P
   15W, 28V, DC ??6 GHz, GaN RF Power Transistor
logo
Qorvo, Inc
T2G6003028-FS QORVO-T2G6003028-FS Datasheet
2Mb / 21P
   30W, 28V DC ??6 GHz, GaN RF Power Transistor
logo
TriQuint Semiconductor
T1G6003028-FS TRIQUINT-T1G6003028-FS_15 Datasheet
1Mb / 13P
   30W, 28V, DC 6 GHz, GaN RF Power Transistor
T1G6003028-FS TRIQUINT-T1G6003028-FS Datasheet
1Mb / 13P
   30W, 28V, DC ??6 GHz, GaN RF Power Transistor
T1G6000528-Q3 TRIQUINT-T1G6000528-Q3 Datasheet
1Mb / 16P
   7W, 28V, DC ??6 GHz, GaN RF Power Transistor
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com