T1G4012036-FL datasheet(1/13 Pages) TRIQUINT

Part #	T1G4012036-FL

Description	120W Peak Power, 24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

Direct Link	http://www.triquint.com

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T1G4012036-FL

120W Peak Power, 24W Average Power,

36V DC

– 3.5 GHz, GaN RF Power Transistor

Datasheet: Rev B 02-24-15

- 1 of 13 -

Disclaimer: Subject to change without notice

www.triquint.com

Applications

 Military radar

 Civilian radar

 Professional and military radio communications

 Test instrumentation

 Wideband or narrowband amplifiers

 Jammers

Ordering Information

Part

ECCN

Description

T1G4012036-FL

3A001.b.3.a

Packaged part

Flanged

T1G4012036-FS-

EVB1

EAR99

3.1-3.5 GHz

Evaluation Board

Functional Block Diagram

Pin Configuration

Pin No.

Label

1

VD / RF OUT

2

VG / RF IN

Flange

Source

General Description

The TriQuint T1G4012036-FL is a 120 W Peak (24 W

Avg.) (P3dB) discrete GaN on SiC HEMT which operates

from DC to 3.5 GHz. The device is constructed with

TriQuint’s proven TQGaN25HV process, which features

advanced field plate techniques to optimize power and

efficiency at high drain bias operating conditions. This

optimization can potentially lower system costs in terms

of

fewer

amplifier

line-ups

and

lower

thermal

management costs.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Product Features

 Frequency: DC to 3.5 GHz

 Output Power (P3dB): 120 W Peak

(24 Watts Avg.) at 3.3 GHz

 Linear Gain: >15 dB at 3.3 GHz

 Operating Voltage: 36 V

 Low thermal resistance package

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Manufacturer	Part #	Datasheet	Description
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T1G4012036-FL Datasheet(PDF) 1 Page - TriQuint Semiconductor

T1G4012036-FL Datasheet(HTML) 1 Page - TriQuint Semiconductor

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