T1G4020036-FL

2 x 120W Peak Power, 2 x24W Average Power,

36V DC – 3.5 GHz, GaN RF Power Transistor

Datasheet: Rev B 11-24-14

- 8 of 21 -

Disclaimer: Subject to change without notice

© 2014 TriQuint

www.triquint.com

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the

impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances

listed follow an optimized trajectory to maintain high power and high efficiency. The impedances are for one independent half of the

device only.

Notes:

1.

Only half of device was load pulled. Load-pull reference planes are shown on page 18.

2.

Load-pull condition: Vds = 36V, Idq = 260mA, Pulsed: 100uS pulse width, 20% duty cycle

-0

.4

-0

.3

-0.2

-0.1

Load Pull

51.3

51

50.7

50.4

50.1

49.6

49.2

48.9

48.5

58.5

56.5

54.8

53.1

51.6

50.3

47.9

16.3

15.9

15.5

15.2

14.9

14.3

13.7

13.3

13.1

Max P3dB is 51.3dBm

Ω

Ω

Ω

Max PAE is 58.5%

Ω

Ω

Ω

Max G3dB is 16.3dB

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Ω

P3dB

PAE3dB

G3dB