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T2G6001528-Q3 Datasheet(PDF) 5 Page - TriQuint Semiconductor |
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T2G6001528-Q3 Datasheet(HTML) 5 Page - TriQuint Semiconductor |
5 / 13 page T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 5 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 50 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% |
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