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IRGPC30M Datasheet(PDF) 2 Page - International Rectifier |
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IRGPC30M Datasheet(HTML) 2 Page - International Rectifier |
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2 / 6 page  C-322 IRGPC30M Notes: VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω, ( See fig. 13a ) Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 35 53 IC = 16A Qge Gate - Emitter Charge (turn-on) — 7.4 11 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 14 21 VGE = 15V td(on) Turn-On Delay Time — 31 — TJ = 25°C tr Rise Time — 31 — ns IC = 16A, VCC = 480V td(off) Turn-Off Delay Time — 280 420 VGE = 15V, RG = 23Ω tf Fall Time — 310 470 Energy losses include "tail" Eon Turn-On Switching Loss — 0.4 — Eoff Turn-Off Switching Loss — 1.9 — mJ See Fig. 9, 10, 11, 14 Ets Total Switching Loss — 2.3 3.5 tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, T J = 125°C VGE = 15V, RG = 23Ω, VCPK < 500V td(on) Turn-On Delay Time — 31 — TJ = 150°C, tr Rise Time — 30 — ns IC = 14A, VCC = 480V td(off) Turn-Off Delay Time — 530 — VGE = 15V, RG = 23Ω tf Fall Time — 660 — Energy losses include "tail" Ets Total Switching Loss — 4.4 — mJ See Fig. 10, 14 LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 750 — VGE = 0V Coes Output Capacitance — 110 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 9.3 — ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.65 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 2.9 IC = 16A VGE = 15V — 2.7 — V IC = 26A See Fig. 2, 5 — 2.2 — IC = 16A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 3.3 6.5 — S VCE = 100V, IC = 16A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1000 VGE = 0V, VCE = 600V, T J = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Next Data Sheet Index Previous Datasheet To Order |
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