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IRGPC40F Datasheet(PDF) 1 Page - International Rectifier |
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IRGPC40F Datasheet(HTML) 1 Page - International Rectifier |
1 / 6 page C-81 Revision 0 IRGPC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Parameter Min. Typ. Max. Units RθJC Junction-to-Case — — 0.77 RθCS Case-to-Sink, flat, greased surface — 0.24 — °C/W RθJA Junction-to-Ambient, typical socket mount — — 40 Wt Weight — 6 (0.21) — g (oz) Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V @VGE = 15V, IC = 27A E C G n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications. Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 49 IC @ TC = 100°C Continuous Collector Current 27 A ICM Pulsed Collector Current 200 ILM Clamped Inductive Load Current 200 VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy 15 mJ PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Thermal Resistance TO-247AC PD - 9.693A Next Data Sheet Index Previous Datasheet To Order |
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