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RD151TS501US Datasheet(PDF) 7 Page - Renesas Technology Corp |
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RD151TS501US Datasheet(HTML) 7 Page - Renesas Technology Corp |
7 / 9 page RD151TS501US REJ03D0897-0102 Rev.1.02 Apr 25, 2007 Page 5 of 6 Recommended Circuit Configuration The power supply circuit of the optimal performance on the application of a system should refer to Figure 3. VDD decoupling is important to reduce Jitter performance. The C1 decoupling capacitor should be placed as close to the VDD pin as possible, otherwise the increased trace inductance will negate its decoupling capability. 8 1 7 IN 6 SEL PDWN 5 2 3 4 C2 C1 GND GND VDD DIV2 OUT R1 GND Notes: C1 = High frequency supply decoupling capacitor. (0.1 µF recommended) C2 = Low frequency supply decoupling capacitor. (22 µF recommended) R1 = Match value to line impedance. (Please use R1 if nessesarry) Figure 3 Recommended circuit configuration Remark for use Please do not use the pull-up resistance for the OUT terminal to prevent wrong operation of IC. |
Similar Part No. - RD151TS501US_15 |
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Similar Description - RD151TS501US_15 |
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