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IRGPF50F Datasheet(PDF) 5 Page - International Rectifier |
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IRGPF50F Datasheet(HTML) 5 Page - International Rectifier |
5 / 6 page C-271 IRGPF50F Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature 0 10 0 0 20 0 0 30 0 0 40 0 0 50 0 0 1 1 0 1 0 0 C E V , C o llector-to-E m itter V oltage (V ) V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GE ies ge gc ce res gc oes ce gc Cies Cres Coes 0 4 8 12 16 20 0 2 0 40 6 0 8 0 1 00 Q , T otal G ate C harge (nC ) g V = 40 0 V I = 2 8A C E C 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 0 1 0 2 0 3 0 4 0 50 6 0 G R , G a te R e s is ta n c e ( ) Ω W V = 72 0V V = 1 5V T = 25°C I = 28 A C C G E C C 0 .1 1 1 0 1 0 0 -6 0 -4 0 -2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 C T , C ase Tem perature (°C ) R = 5 V = 15 V V = 7 20 V Ω I = 56 A I = 2 8A I = 1 4A C C C G G E C C To Order Next Data Sheet Index Previous Datasheet |
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