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SSG9575 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9575 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente SSG9575 -6A, -60V,RDS(ON) 90m P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf -60 -0.04 -1.0 - 3.0 100 -1 -25 90 120 18 5 7 12 5 68 32 2790 165 125 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=-25V f=1.0MHz VDD=-30V ID=-1A VGS=-10V RG=3.3 RD=30 Ω Ω ID=-4A VDS=-48V VGS=-4.5V VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VGS=0V, ID=-250uA VGS= 25V ± VDS=-60V,VGS=0 VDS=-48V,VGS=0 VDS=VGS, ID=-250uA Reference to 25 ,ID=-1mA _ _ _ Source-Drain Diode _ _ _ _ _ _ _ Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VSD _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ IS=-2A, VGS=0V. V -1.2 Notes: 1.Pulse width limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. ≦ ≦ 2 Forward Transconductance Gfs S 7 VDS=-10V, ID=-4A _ _ _ 1745 28 Reverse Recovery Time Reverse Recovery Charge Is=-4A, VGS=0V _ _ _ _ Trr Qrr nS 56 dl/dt=100A/us 3.Surface mounted on 1 inch2 copper pad of FR4 board; 135OC/W when mounted on min. copper pad. nC 146 o C o C o C o C o 2 2 2 2 Ω 01-Jun-2002 Rev. A Page 2 of 4 |
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