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CY20AAH-8F Datasheet(PDF) 4 Page - Renesas Technology Corp |
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CY20AAH-8F Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page  CY20AAH-8F Rev.2.00, Nov 29, 2005, page 2 of 4 Electrical Characteristics (Tj = 25°C) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-emitter breakdown voltage V(BR)CES 450 — — V IC = 1 mA, VGE = 0 V Collector-emitter leakage current ICES — — 10 µA VCE = 400 V, VGE = 0 V Gate-emitter leakage current IGES — — ±10 µA VGE = ±6 V, VCS = 0 V Gate-emitter threshold voltage VGE(th) 0.4 0.6 1.2 V IC = 1 mA, VCE = 10 V Collector-Emitter saturation voltage VCE(sat) — 3.5 7.0 V IC = 130 A, VGE = 2.5 V Input capacitance Cies — 5500 — pF VCE = 25 V, VGS = 0 V, f = 1MHz Performance Curves Maximum Collector Current vs. Gate - Emitter Voltage 0 20 40 60 80 100 120 140 160 012 34 6 5 Gate - Emitter Voltage VGE (V) TC = 70°C CM = 400 µF RG = 68 Ω |
Similar Part No. - CY20AAH-8F_15 |
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Similar Description - CY20AAH-8F_15 |
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