H5N5006DL_15 datasheet(4/10 Pages) RENESAS

Part #	H5N5006DL

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 10 page

H5N5006DL, H5N5006DS

Rev.1.00, May 30, 2006, page 2 of 7

Electrical Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

500

—

V

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

1

µA

VDS = 500 V, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS = ±30 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

3.0

—

4.5

V

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|

1.5

2.5

—

S

ID = 1.5 A, VDS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

2.5

3.0

Ω

ID = 1.5 A, VGS = 10 V

Note4

Input capacitance

Ciss

—

365

—

pF

Output capacitance

Coss

—

35

—

pF

Reverse transfer capacitance

Crss

—

8

—

pF

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

20

—

ns

Rise time

tr

—

12

—

ns

Turn-off delay time

td(off)

—

48

—

ns

Fall time

tf

—

15

—

ns

VDD

≅ 250 V, ID = 1.5 A

VGS = 10 V

RL = 167

Ω

Rg = 10

Ω

Total gate charge

Qg

—

14

—

nC

Gate to source charge

Qgs

—

2

—

nC

Gate to drain charge

Qgd

—

8

—

nC

VDD = 400 V

VGS = 10 V

ID = 3 A

Body-drain diode forward voltage

VDF

—

0.85

1.3

V

IF = 3 A, VGS = 0

Note4

Body-drain diode reverse recovery

time

trr

—

270

—

ns

Body-drain diode reverse recovery

charge

Qrr

—

0.8

—

µC

IF = 3 A, VGS = 0

diF/dt = 100 A/

µs

Notes: 4. Pulse test

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