TGA2216-SM

0.1

– 3.0GHz 10W GaN Power Amplifier

Preliminary Datasheet: Rev - 05-05-14

- 2 of 18 -

Disclaimer: Subject to change without notice

© 2014 TriQuint

www.triquint.com

Absolute Maximum Ratings

Parameter

Value

80V

-8 to 0V

0 to 40V

760mA

-5 to 5.6mA

-5 to 5.6mA

28W

33dBm

27dBm

275°C

Mounting Temperature

(30 Seconds)

320°C

Storage Temperature

-55 to 150°C

Operation of this device outside the parameter ranges

given above may cause permanent damage. These are

stress ratings only, and functional operation of the device at

these conditions is not implied.

Recommended Operating Conditions

Parameter

Value

40V

360mA

-2.4V (Typ.)

+17.7V (Typ.)

Electrical specifications are measured at specified test conditions.

Specifications

are

not

guaranteed

over

all

recommended

operating conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25

Parameter

Min

Typical

Max

Units

Operational Frequency Range

0.1

3.0

GHz

Small Signal Gain

21

dB

Input Return Loss

> 8

dB

Output Return Loss

> 11

dB

Output Power (Pin = 27dBm)

> 40

dBm

Power Added Efficiency (Pin = 27dBm)

50 (mid band)

%

Power @ 1dB Compression (P1dB)

> 35

dBm

-25

dBc

-33

dBc

Small Signal Gain Temperature Coefficient

-0.03

dB/°C

Output Power Temperature Coefficient

-0.007

dBm/°C

Recommended Operating Voltage:

40

48

V