4

TGA2513

May 2009 © Rev -

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

TABLE IV

THERMAL INFORMATION

Parameter

Test Conditions

(°C)

(°C/W)

Tm

(HRS)

(channel to backside of

carrier)

Vd = 5 V

Pdiss = 0.375 W

82

32

4.5 E+7

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 70°C baseplate temperature. Worst case condition with no RF applied,

100% of DC power is dissipated.

Median Lifetime (Tm) vs. Channel Temperature