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IRHNA8260 Datasheet(PDF) 2 Page - International Rectifier |
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IRHNA8260 Datasheet(HTML) 2 Page - International Rectifier |
2 / 4 page Thermal Resistance Parameter Min. Typ. Max. Units Test Conditions RthJC Junction-to-Case — — 0.42 K/W RthJ-PCB Junction-to-PC board — TBD — soldered to a copper-clad PC board Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 43 Modified MOSFET symbol showing the ISM Pulse Source Current (Body Diode) — — 172 integral reverse p-n junction rectifier. VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 43A, VGS = 0V trr Reverse Recovery Time — — 820 ns Tj = 25°C, IF = 43A, di/dt ≤ 100 A/µs QRR Reverse Recovery Charge — — 12 µCVDD ≤ 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0 mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.27 — V/°C Reference to 25°C, ID = 1.0 mA Voltage RDS(on) Static Drain-to-Source — — 0.070 VGS = 12V, ID = 27A On-State Resistance — — 0.077 Ω VGS = 12V, ID = 43A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA gfs Forward Transconductance 9.0 — — S ( )VDS > 15V, IDS = 27A IDSS Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max. Rating,VGS = 0V — — 250 VDS = 0.8 x Max. Rating VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS = -20V Qg Total Gate Charge — — 240 VGS = 12V, ID = 43A Qgs Gate-to-Source Charge — — 42 VDS = Max. Rating x 0.5 Qgd Gate-to-Drain (“Miller”) Charge — — 84 td(on) Turn-On Delay Time — — 50 VDD = 100V, ID = 43A, tr Rise Time — — 200 RG = 2.35Ω td(off) Turn-Off Delay Time — — 200 tf Fall Time — — 200 LD Internal Drain Inductance — 8.7 — LS Internal Source Inductance — 8.7 — Ciss Input Capacitance — 6500 — VGS = 0V, VDS = 25V Coss Output Capacitance — 1200 — f = 1.0 MHz Crss Reverse Transfer Capacitance — 300 — IRHNA7260, IRHNA8260 Devices Pre-Radiation µA nC pF nH ns Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. nA A Next Data Sheet Index Previous Datasheet To Order |
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