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IRL620S Datasheet(PDF) 1 Page - International Rectifier

Part # IRL620S
Description  Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRL620S Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 5.0 V
5.2
ID @ TC = 100°C
Continuous Drain Current, VGS @ 5.0 V
3.3
A
IDM
Pulsed Drain Current
21
PD @TC = 25°C
Power Dissipation
50
PD @TA = 25°C
Power Dissipation (PCB Mount)**
3.1
Linear Derating Factor
0.40
Linear Derating Factor (PCB Mount)**
0.025
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
125
mJ
IAR
Avalanche Current
5.2
A
EAR
Repetitive Avalanche Energy
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
IRL620S
HEXFET® Power MOSFET
PD -9.1218
Revision 0
VDSS = 200V
RDS(on) = 0.80
ID = 5.2A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
2.5
RθJA
Junction-to-Ambient (PCB Mount)**
40
°C/W
RθJA
Junction-to-Ambient
62
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(on) Specified at VGS=4V & 5V
Fast Switching
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
Description
A
SMD-220
W
W/°C
°C
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
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