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SST8205S Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SST8205S Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8205S 6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power MOSFET 07-Aug-2014 Rev. B Page 2 of 4 ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient △ BVDS /△Tj - 0.03 - V/°C Reference to 25°C, ID=1mA Gate-Threshold Voltage VGS(th) 0.5 - 1.5 V VDS=VGS, ID=250uA Gate-Body Leakage Current IGSS - - ±100 nA VGS=±10V TJ=25°C - - 1 VDS=16V, VGS=0 Drain-Source Leakage Current TJ=70°C IDSS - - 25 uA VDS=16V, VGS=0 - - 28 VGS=4.5V, ID=6A Drain-Source On-Resistance 2 RDS(ON) - - 38 mΩ VGS=2.5V, ID=5.2A Forward Transconductance gfs - 20 - S VDS=10V, ID=6A Dynamic Total Gate Charge 2 Qg - 23 - Gate-Source Charge Qgs - 4.5 - Gate-Drain (“Miller”) Charge Qgd - 7 - nC VDS=20V, VGS=5V, ID=6A Turn-on Delay Time 2 Td(on) - 30 - Rise Time Tr - 70 - Turn-off Delay Time Td(off) - 40 - Fall Time Tf - 65 - nS VDS=10V, VGS=5V, RG=6Ω, RD=10Ω, ID=1A Input Capacitance Ciss - 1035 - Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss - 150 - pF VGS=0V VDS= 20V, f=1.0MHz Source-Drain Diode Diode Forward Voltage 2 VSD - - 1.2 V IS=1.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty ≦ cycle 2% ≦ 3. Surface mounted on 1 in 2 copper pad of FR4 board, t≦5sec; 180°C/W when mounted on Min. copper pad. |
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