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IRLRU120N Datasheet(PDF) 1 Page - International Rectifier |
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IRLRU120N Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRLR/U120N HEXFET® Power MOSFET S D G VDSS = 100V RDS(on) = 0.185Ω ID = 10A Description 5/11/98 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0 A IDM Pulsed Drain Current 35 PD @TC = 25°C Power Dissipation 48 W Linear Derating Factor 0.32 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 85 mJ IAR Avalanche Current 6.0 A EAR Repetitive Avalanche Energy 4.8 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.1 RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance D -P A K TO -2 52 A A I-PAK TO -25 1 A A l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. PD - 91541B www.irf.com 1 |
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Similar Description - IRLRU120N |
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