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IRLZ14SL Datasheet(PDF) 2 Page - International Rectifier |
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IRLZ14SL Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRLZ14S/L V DD = 25V, starting TJ = 25°C, L = 790µH RG = 25Ω, IAS = 10A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD ≤ 10A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ14 data and test conditions Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 10A, VGS = 0V trr Reverse Recovery Time ––– 93 130 ns TJ = 25°C, IF = 10A Qrr Reverse Recovery Charge ––– 340 650 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 10 40 S D G Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.2 VGS = 5.0V, ID = 6.0A ––– ––– 0.28 Ω VGS = 4.0V, ID = 5.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 3.5 ––– ––– S VDS = 25V, ID = 6.0A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 10V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -10V Qg Total Gate Charge ––– ––– 8.4 ID = 10A Qgs Gate-to-Source Charge ––– ––– 3.5 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 6.0 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 9.3 ––– VDD = 30V tr Rise Time ––– 110 ––– ID = 10A td(off) Turn-Off Delay Time ––– 17 ––– RG = 12 Ω tf Fall Time ––– 26 ––– RD = 2.8Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 400 ––– VGS = 0V Coss Output Capacitance ––– 170 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 7.5 nH |
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