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H5N5007P Datasheet(PDF) 5 Page - Renesas Technology Corp |
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H5N5007P Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 9 page H5N5007P Rev.4.00 Sep 07, 2005 page 3 of 6 Main Characteristics 200 0 0 50 100 150 50 100 150 200 100 300 10 30 3 1 0.3 0.1 0.1 1 3 0.3 10 30 100 300 1000 50 0 0 10 20 30 40 4 8 12 16 20 50 0 0 10 20 30 40 24 68 10 0.03 0.01 1000 Ta = 25°C 10 V VGS = 5 V 5.5 V Tc = 75°C 25°C –25°C 6 V Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Operation in this area is limited by RDS(on) Gate to Source Voltage VGS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test Drain to Source Voltage VDS (V) Typical Output Characteristics Pulse Test 0 0 2 4 6 8 48 12 16 20 15 20 100 210 50 1 0.2 0.5 0.05 0.1 0.01 0.02 10 ID = 25 A 15 A 5 A VGS = 10 V, 15 V Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Static Drain to Source on State Resistance vs. Drain Current Pulse Test Drain Current ID (A) 10 µs 100 µs 1 ms PW = 10 ms (1shot) DC Operation (T c = 25°C) 8 V |
Similar Part No. - H5N5007P_15 |
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Similar Description - H5N5007P_15 |
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